bu326a high voltage npn silicon power transistor n stmicroelectronics preferred salestype n npn transistor n fast switching speed applications: n power supplies n linear and switching industrial equipment description the bu326a is a silicon multiepitaxial mesa npn transistor in jedec to-3 metal case particularly intended for switch-mode ctv supply system. ? internal schematic diagram december 2000 1 2 to-3 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 900 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 10 v i c collector current 6 a i cm collector peak current 8 a i b base current 3 a p tot total power dissipation at t case 25 o c 75 w t stg storage temperature -65 to 200 o c t j max. operating junction temperature 200 o c 1/4
thermal data r thj-case thermal resistance junction-case max 2.33 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 900 v v ce = 900 v t c = 125 o c 1 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 10 v 10 ma v ceo(sus) * collector-emitter sustaining voltage(i b = 0) i c = 100 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 2.5 a i b = 0.5 a i c = 4 a i b = 1.25 a 1.5 3 v v v be(sat) * base-emitter saturation voltage i c = 2.5 a i b = 0.5 a i c = 4 a i b = 1.25 a 1.4 1.6 v h fe * dc current gain i c = 1 a v ce = 5 v 25 t on turn-on time i c = 2.5 a i b1 = 0.5 a v cc = 250 v 0.5 m s t s storage time i c = 2.5 a i b1 = 0.5 a i b2 = -1a a v cc = 250 v 3.5 m s t f fall time i c = 2.5 a i b1 = 0.5 a i b2 = -1a a v cc = 250 v 0.5 m s * pulsed: pulse duration = 300 m s, duty cycle 1.5 % bu326a 2/4
dim. mm inch min. typ. max. min. typ. max. a 11.00 13.10 0.433 0.516 b 0.97 1.15 0.038 0.045 c 1.50 1.65 0.059 0.065 d 8.32 8.92 0.327 0.351 e 19.00 20.00 0.748 0.787 g 10.70 11.10 0.421 0.437 n 16.50 17.20 0.649 0.677 p 25.00 26.00 0.984 1.023 r 4.00 4.09 0.157 0.161 u 38.50 39.30 1.515 1.547 v 30.00 30.30 1.187 1.193 e b r c d a p g n v u o p003f to-3 mechanical data bu326a 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com bu326a 4/4
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